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The X-Fab Semiconductor Foundries Ag patent solves the following problem:
Our analysis of this patent is as follows:
X-Fab Semiconductor Foundries Ag’s patent US 9224856 B2 deals with LDMOS transistors for CMOS technologies and an associated production method.
A semiconductor component or device, a lateral effect power transistor is made of a LDMOS transistor in such a way that, in combination with a trench isolation region (12) and carefully blast feed guiding region (28, 28A), a better potential profile is achieved in the drain drift region (8) of the transistor. For this purpose, the advantageous embodiment, it is possible to use standard implantation process CMO technology, without additional process steps required.
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